دیتاشیت WPM3012-3/TR
مشخصات دیتاشیت
| نام دیتاشیت |
WPM3012-3/TR
|
| حجم فایل |
52.401
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
WILLSEMI(Will Semicon) WPM3012-3/TR
-
Operating Temperature:
+150°C@(Tj)
-
Power Dissipation (Pd):
800mW
-
Total Gate Charge (Qg@Vgs):
1.55nC@10V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
654pF@20V
-
Continuous Drain Current (Id):
2.9A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.9V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
56pF@20V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
58mΩ@10V,3.1A
-
Package:
SOT-23
-
Manufacturer:
WILLSEMI(Will Semicon)
